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| SI1029X New Product Vishay Siliconix Complementary N- and P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 rDS(on) (W) 1.40 @ VGS = 10 V 3 @ VGS = 4.5 V 4 @ VGS = -10 V 8 @ VGS = -4.5 V ID (mA) 500 200 -500 -25 P-Channel -60 FEATURES D Very Small Footprint D High-Side Switching D Low On-Resistance: N-Channel, 1.40 W P-Channel, 4 W D Low Threshold: "2 V (typ) D Fast Switching Speed: 15 ns (typ) D Gate-Source ESD Protection BENEFITS D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits APPLICATIONS D Replace Digital Transistor, Level-Shifter D Battery Operated Systems D Power Supply Converter Circuits SC-89 S1 1 6 D1 Marking Code: H G1 2 5 G2 D2 3 4 S2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Currentb Continuous Source Current (Diode Maximum Power Dissipationa Conduction)a TA = 25_C TA = 85_C TA = 25_C TA = 85_C P-Channel 5 secs Steady State -60 "20 V -200 -145 -650 -190 -135 mA -380 250 130 mW _C V Symbol VDS VGS 5 secs Steady State 60 Unit 320 ID IDM IS PD TJ, Tstg ESD 450 280 145 230 650 305 220 380 250 130 -55 to 150 2000 -450 280 145 Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71435 S-03518--Rev. A, 11-Apr-01 www.vishay.com 1 SI1029X Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = 10 mA VGS = 0 V, ID = -10 mA VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "5 V " Gate-Body Leakage IGSS VDS = 0 V, VGS = "10 V " VDS = 50 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -50 V, VGS = 0 V VDS = 50 V, VGS = 0 V, TJ = 85_C VDS = -50 V, VGS = 0 V, TJ = 85_C VDS = 10 V, VGS = 4.5 V On-State Drain Currenta ID(on) VDS = -10 V, VGS = -4.5 V VDS = 7.5 V, VGS = -4.5 V VDS = -10 V, VGS = -10 V VGS = 4.5 V, ID = 200 mA VGS = -4.5 V, ID = -25 mA Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 500 mA VGS = -10 V, ID = -500 mA VGS = 10 V, ID = 500 mA, TJ = 125_C VGS = -10 V, ID = -500 mA, TJ = 125_C Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = 10 V, ID = 200 mA VDS = -10 V, ID = -100 mA IS = 200 mA, VGS = 0 V IS = -200 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 200 100 1.4 -1.4 V mS 500 -50 800 -600 3 8 1.40 4 2.50 6 W mA 60 -60 1 -1.0 2.5 -3.0 "50 "100 "150 "200 10 -25 100 -250 nA V Symbol Test Condition Min Typ Max Unit Gate Threshold Voltage Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 250 mA Gate-Source Charge Qgs Qgd Ciss N-Channel VDS = 25 V, VGS = 0 V, f = 1 MHz Output Capacitance Coss Crss N-Channel VDD = 30 V, RL = 150 W ID ^ 200 mA, VGEN = 10 V, RG = 10 W P-Channel VDD = -25 V, RL = 150 W ID ^ -165 mA, VGEN = -10 V, RG = 10 W P-Channel VDS = -25 V, VGS = 0 V, f = 1 MHz P-Channel VDS = -30 V, VGS = -15 V, ID = -500 mA P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Input Capacitance P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 750 1700 75 260 225 460 30 23 6 10 3 5 15 20 ns 20 35 Turn-Off Timec tOFF pF pC Gate-Drain Charge Reverse Transfer Capacitance Turn-On Timec tON Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com Document Number: 71435 S-03518--Rev. A, 11-Apr-01 2 SI1029X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 1.0 6V VGS = 10 thru 7 V 0.8 I D - Drain Current (A) 5V I D - Drain Current (mA) 900 25_C 125_C 600 TJ = -55_C 1200 Vishay Siliconix N CHANNEL Transfer Characteristics 0.6 4V 0.4 300 0.2 3V 0.0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 4.0 3.5 r DS(on) - On-Resistance ( W ) 50 VGS = 0 V f = 1 MHz 40 Capacitance 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 200 400 600 800 1000 0 0 5 10 15 20 25 VGS = 4.5 V VGS = 10 V C - Capacitance (pF) 30 Ciss 20 Coss 10 Crss ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) Gate Charge 7 V GS - Gate-to-Source Voltage (V) 6 5 4 3 2 1 0 0.0 0.0 -50 VDS = 10 V ID = 250 mA 2.0 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA r DS(on) - On-Resistance ( W ) (Normalized) 1.6 1.2 VGS = 4.5 V @ 200 mA 0.8 0.4 0.1 0.2 0.3 0.4 0.5 0.6 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71435 S-03518--Rev. A, 11-Apr-01 www.vishay.com 3 SI1029X Vishay Siliconix New Product N CHANNEL TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 VGS = 0 V 4 100 TJ = 125_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) 5 On-Resistance vs. Gate-Source Voltage 3 2 ID = 200 mA ID = 500 mA 10 TJ = 25_C 1 TJ = -55_C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature 0.4 0.2 V GS(th) Variance (V) ID = 250 mA -0.0 -0.2 -0.4 -0.6 -0.8 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71435 S-03518--Rev. A, 11-Apr-01 SI1029X New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10 V 7V 0.8 I D - Drain Current (A) I D - Drain Current (mA) 8V 900 25_C 125_C 600 1200 TJ = -55_C Vishay Siliconix P CHANNEL Transfer Characteristics 0.6 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 300 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 20 40 VGS = 0 V Capacitance r DS(on) - On-Resistance ( W ) 16 VGS = 4.5 V C - Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 0 0 5 10 15 20 25 ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V) Gate Charge 15 V GS - Gate-to-Source Voltage (V) ID = 500 mA 12 VDS = 30 V VDS = 48 V 9 r DS(on) - On-Resistance ( W ) (Normalized) 1.5 1.8 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA 1.2 VGS = 4.5 V @ 25 mA 0.9 6 0.6 3 0.3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.0 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71435 S-03518--Rev. A, 11-Apr-01 www.vishay.com 5 SI1029X Vishay Siliconix New Product P CHANNEL On-Resistance vs. Gate-Source Voltage 10 VGS = 0 V 8 100 TJ = 125_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) ID = 500 mA TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 6 4 ID = 200 mA 2 10 TJ = 25_C TJ = -55_C 1 0.00 0.3 0.6 0.9 1.2 1.5 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature 0.5 0.4 V GS(th) Variance (V) 0.3 0.2 0.1 -0.0 -0.1 -0.2 -0.3 -50 ID = 250 mA -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 N OR P CHANNEL 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 500_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 6 Document Number: 71435 S-03518--Rev. A, 11-Apr-01 |
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